Interplay of the Kondo Effect and Strong Spin-Orbit Coupling in Multihole Ultraclean Carbon Nanotubes
نویسندگان
چکیده
منابع مشابه
Large spin-orbit coupling in carbon nanotubes.
It has recently been recognised that the strong spin-orbit interaction present in solids can lead to new phenomena, such as materials with non-trivial topological order. Although the atomic spin-orbit coupling in carbon is weak, the spin-orbit coupling in carbon nanotubes can be significant due to their curved surface. Previous works have reported spin-orbit couplings in reasonable agreement wi...
متن کاملKondo effect in graphene with Rashba spin-orbit coupling
D. Mastrogiuseppe,1,2 A. Wong,3 K. Ingersent,3 S. E. Ulloa,1,2 and N. Sandler1,2 1Department of Physics and Astronomy, and Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701-2979, USA 2Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany 3Department of Physics, University of Florida, P.O. Box 118440, Gaines...
متن کاملGate-dependent spin–orbit coupling in multielectron carbon nanotubes
We here present additional theoretical analysis and experimental data supporting the conclusions in the article. First, the carbon nanotube dispersion relation including spin-orbit interaction is reviewed starting from a modified Dirac Hamiltonian, and the single-particle model used in the fitting procedure is explained. Second, tunneling spectroscopy data and the corresponding analysis used to...
متن کاملSpin-orbit scattering and the Kondo effect.
The effects of spin-orbit scattering of conduction electrons in the Kondo regime are investigated theoretically. It is shown that due to time-reversal symmetry, spin-orbit scattering does not suppress the Kondo effect, even though it breaks spin-rotational symmetry, in full agreement with experiment. An orbital magnetic field, which breaks time-reversal symmetry, leads to an effective Zeeman sp...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2013
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.111.136803